NCE · FETs & Power MOSFETs · MPN NCE0125AI
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| Gate Charge(Qg) | 70.4nC@50V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 25A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Pd - Power Dissipation | 70W |
| Reverse Transfer Capacitance (Crss@Vds) | 18.3pF |
| RDS(on) | 36mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3nF |
100V 25A 2.2V 70W 36mΩ@10V 1 N-channel TO-251 Single FETs, MOSFETs RoHS