NCE · FETs & Power MOSFETs · MPN NCE0117I
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| Gate Charge(Qg) | 30nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 17A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 55W |
| Reverse Transfer Capacitance (Crss@Vds) | 180pF |
| RDS(on) | 85mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.35nF |
100V 17A 2.5V 55W 85mΩ@4.5V 1 N-channel TO-251 Single FETs, MOSFETs RoHS