MSKSEMI WNM2021-3/MS

MSKSEMI · FETs & Power MOSFETs · MPN WNM2021-3/MS

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Specifications

Gate Charge(Qg)1.15nC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)10pF
Current - Continuous Drain(Id)890mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation225mW
Reverse Transfer Capacitance (Crss@Vds)2.5pF
RDS(on)320mΩ@1.8V
Number1 N-channel
Input Capacitance(Ciss)17pF
TypeN-Channel

Technical details

N-Channel 20V 890mA 225mW Surface Mount SOT-323

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