MSKSEMI STU417S

MSKSEMI · FETs & Power MOSFETs · MPN STU417S

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Specifications

Gate Charge(Qg)28nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation55W
Reverse Transfer Capacitance (Crss@Vds)150pF
RDS(on)10.5mΩ@10V;14.2mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)2.05nF
TypeP-Channel

Technical details

P-Channel 40V 50A 55W Surface Mount TO-252

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