MSKSEMI Si7850DP-MS

MSKSEMI · FETs & Power MOSFETs · MPN Si7850DP-MS

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Specifications

Gate Charge(Qg)12.6nC@4.5V
Drain to Source Voltage60V
Output Capacitance(Coss)86pF
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation34.7W
Reverse Transfer Capacitance (Crss@Vds)64pF
RDS(on)25mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.378nF
TypeN-Channel

Technical details

N-Channel 60V 30A 34.7W Surface Mount DFN5x6-8L

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