MSKSEMI · FETs & Power MOSFETs · MPN SI7114DN-T1-E3-MS
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| Output Capacitance(Coss) | 267pF |
|---|---|
| Pd - Power Dissipation | 59W |
| Configuration | - |
| Drain to Source Voltage | 30V |
| Gate Charge(Qg) | 20nC |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| RDS(on) | 6mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 210pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.295nF |
59W 30V 1.2V 6mΩ@10V 1 N-channel N-Channel DFN-8L(3x3) Single FETs, MOSFETs RoHS