MSKSEMI SI2343DS-T1-E3-MS

MSKSEMI · FETs & Power MOSFETs · MPN SI2343DS-T1-E3-MS

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Specifications

Gate Charge(Qg)5.1nC@4.5V
Drain to Source Voltage30V
Output Capacitance(Coss)55pF
Current - Continuous Drain(Id)4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation1.56W
Reverse Transfer Capacitance (Crss@Vds)40pF
RDS(on)45mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)560pF
TypeP-Channel

Technical details

P-Channel 30V 4A 1.56W Surface Mount SOT-23

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