MSKSEMI SI2333CDS-T1-MS

MSKSEMI · FETs & Power MOSFETs · MPN SI2333CDS-T1-MS

No reviews yet — be the first to review MSKSEMI SI2333CDS-T1-MS.

Specifications

Gate Charge(Qg)10nC@4.5V
Drain to Source Voltage18V
Current - Continuous Drain(Id)7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))800mV
Pd - Power Dissipation1W
Reverse Transfer Capacitance (Crss@Vds)290pF
RDS(on)22mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)1.21nF

Technical details

P-Channel 18V 7A 1W Surface Mount SOT-23-3L

Related FETs & Power MOSFETs