MSKSEMI SI2323DS-T1-E3-MS

MSKSEMI · FETs & Power MOSFETs · MPN SI2323DS-T1-E3-MS

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Specifications

Gate Charge(Qg)9.6nC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)70pF
Current - Continuous Drain(Id)4.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV
Pd - Power Dissipation1.56W
Reverse Transfer Capacitance (Crss@Vds)55pF
RDS(on)40mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)850pF
TypeP-Channel

Technical details

P-Channel 20V 4.5A 1.56W Surface Mount SOT-23

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