MSKSEMI · FETs & Power MOSFETs · MPN SI2318DS-T1-E3-MS
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| Gate Charge(Qg) | 4.7nC@4.5V |
|---|---|
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | 65pF |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Pd - Power Dissipation | 1.56W |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF |
| RDS(on) | 36mΩ@10V;45mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 420pF |
| Type | N-Channel |
N-Channel 40V 4A 1.56W Surface Mount SOT-23