MSKSEMI SI2310AI-MS

MSKSEMI · FETs & Power MOSFETs · MPN SI2310AI-MS

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Specifications

Gate Charge(Qg)7.5nC@4.5V
Drain to Source Voltage60V
Output Capacitance(Coss)34pF
Current - Continuous Drain(Id)3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.3V
Pd - Power Dissipation1.7W
Reverse Transfer Capacitance (Crss@Vds)26pF
RDS(on)66mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)510pF
TypeN-Channel

Technical details

N-Channel 60V 3A 1.7W Surface Mount SOT-23

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