MSKSEMI · FETs & Power MOSFETs · MPN SI2309CDS-T1-GE3-MS
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| Gate Charge(Qg) | 8.2nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 1.8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 1.56W |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF |
| RDS(on) | 200mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 425pF |
P-Channel 60V 1.8A 1.56W Surface Mount SOT-23