MSKSEMI SI2307CDS

MSKSEMI · FETs & Power MOSFETs · MPN SI2307CDS

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Specifications

Gate Charge(Qg)2.5nC@4.5V
Drain to Source Voltage30V
Output Capacitance(Coss)39pF
Current - Continuous Drain(Id)3.4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation1.56W
Reverse Transfer Capacitance (Crss@Vds)29pF
RDS(on)75mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)226pF
TypeP-Channel

Technical details

P-Channel 30V 3.4A 1.56W Surface Mount SOT-23

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