MSKSEMI SI2302CDS-T1-GE3-MS

MSKSEMI · FETs & Power MOSFETs · MPN SI2302CDS-T1-GE3-MS

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Specifications

Gate Charge(Qg)3.6nC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)32pF
Current - Continuous Drain(Id)3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))500mV
Pd - Power Dissipation1.56W
Reverse Transfer Capacitance (Crss@Vds)26pF
RDS(on)40mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)180pF
TypeN-Channel

Technical details

N-Channel 20V 3A 1.56W Surface Mount SOT-23

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