MSKSEMI SI2300DS-T1-MS

MSKSEMI · FETs & Power MOSFETs · MPN SI2300DS-T1-MS

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Specifications

Gate Charge(Qg)15nC@4.5V
Drain to Source Voltage20V
Current - Continuous Drain(Id)6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))650mV
Pd - Power Dissipation1.25W
Reverse Transfer Capacitance (Crss@Vds)96pF
RDS(on)27mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)500pF

Technical details

N-Channel 20V 6A 1.25W Surface Mount SOT-23-3L

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