MSKSEMI MSK60N03DF

MSKSEMI · FETs & Power MOSFETs · MPN MSK60N03DF

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Specifications

Gate Charge(Qg)20nC@4.5V
Drain to Source Voltage30V
Output Capacitance(Coss)267pF
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation59W
RDS(on)6mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)210pF
Number1 N-channel
Input Capacitance(Ciss)2.295nF
TypeN-Channel

Technical details

N-Channel 30V 60A 59W Surface Mount DFN-8(3x3)

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