MSKSEMI MSK50N03DF

MSKSEMI · FETs & Power MOSFETs · MPN MSK50N03DF

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Specifications

Gate Charge(Qg)9.8nC@4.5V
Drain to Source Voltage30V
Output Capacitance(Coss)131pF
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation37.5W
Reverse Transfer Capacitance (Crss@Vds)109pF
RDS(on)7.5mΩ@10V;11mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)940pF
TypeN-Channel

Technical details

N-Channel 30V 50A 37.5W Surface Mount DFN-8(3x3)

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