MSKSEMI MSK3419DF

MSKSEMI · FETs & Power MOSFETs · MPN MSK3419DF

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Specifications

Gate Charge(Qg)12.5nC
Drain to Source Voltage30V
Output Capacitance(Coss)194pF
Current - Continuous Drain(Id)32A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.95V
Pd - Power Dissipation3.57W
RDS(on)10mΩ@10V;14mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)158pF
Number1 P-Channel
Input Capacitance(Ciss)1.345nF
TypeP-Channel

Technical details

P-Channel 30V 32A 3.57W Surface Mount DFN-8(3x3)

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