MSKSEMI MSK30P02DF

MSKSEMI · FETs & Power MOSFETs · MPN MSK30P02DF

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Specifications

Gate Charge(Qg)35nC@4.5V
Drain to Source Voltage20V
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation18W
Reverse Transfer Capacitance (Crss@Vds)590pF
RDS(on)15mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)2.8nF
TypeP-Channel

Technical details

P-Channel 20V 30A 18W Surface Mount DFN3X3-8L

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