MSKSEMI MSK30N03DF

MSKSEMI · FETs & Power MOSFETs · MPN MSK30N03DF

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Specifications

Gate Charge(Qg)7.2nC@4.5V
Drain to Source Voltage30V
Output Capacitance(Coss)81pF
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation20W
RDS(on)9mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)65pF
Number1 N-channel
Input Capacitance(Ciss)572pF
TypeN-Channel

Technical details

N-Channel 30V 30A 20W Surface Mount DFN-8(3.3x3.3)

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