MSKSEMI MSK20P80GNF

MSKSEMI · FETs & Power MOSFETs · MPN MSK20P80GNF

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Specifications

Gate Charge(Qg)149nC@4.5V
Drain to Source Voltage18V
Output Capacitance(Coss)2.5nF
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))600mV
Pd - Power Dissipation41.67W
Reverse Transfer Capacitance (Crss@Vds)1.1nF
RDS(on)2.5mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)16nF
TypeP-Channel

Technical details

P-Channel 18V 80A 41.67W Surface Mount DFN-8(5x6)

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