MSKSEMI MSK100N03DF

MSKSEMI · FETs & Power MOSFETs · MPN MSK100N03DF

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Specifications

Gate Charge(Qg)31.6nC
Drain to Source Voltage30V
Output Capacitance(Coss)400pF
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation62.5W
Reverse Transfer Capacitance (Crss@Vds)315pF
RDS(on)4mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.075nF
TypeN-Channel

Technical details

N-Channel 30V 100A 62.5W Surface Mount DFN-8(3.3x3.3)

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