MSKSEMI MSCEP023N10LL

MSKSEMI · FETs & Power MOSFETs · MPN MSCEP023N10LL

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Specifications

Output Capacitance(Coss)1.5nF
Pd - Power Dissipation55W
Gate Charge(Qg)122nC
Configuration-
Drain to Source Voltage100V
Current - Continuous Drain(Id)-
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
RDS(on)1.9mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)40pF
Number1 N-channel
Input Capacitance(Ciss)9.1nF

Technical details

55W 100V 3V 1.9mΩ@10V 1 N-channel N-Channel TOLL-8 Single FETs, MOSFETs RoHS

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