MSKSEMI MS80N03

MSKSEMI · FETs & Power MOSFETs · MPN MS80N03

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Specifications

Gate Charge(Qg)41nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)248pF
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation105W
RDS(on)3.5mΩ@10V;7mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)221pF
Number1 N-channel
Input Capacitance(Ciss)1.963nF
TypeN-Channel

Technical details

N-Channel 30V 80A 105W Surface Mount TO-252-2

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