MSKSEMI MS7N65F

MSKSEMI · FETs & Power MOSFETs · MPN MS7N65F

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Specifications

Drain to Source Voltage650V
Gate Charge(Qg)27nC@10V
Current - Continuous Drain(Id)7A
Output Capacitance(Coss)100pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation34W
Reverse Transfer Capacitance (Crss@Vds)14pF
RDS(on)1.35Ω@10V
Number1 N-channel
Input Capacitance(Ciss)1.089nF
TypeN-Channel

Technical details

N-Channel 650V 7A 34W Through Hole TO-220F

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