MSKSEMI MS60N03

MSKSEMI · FETs & Power MOSFETs · MPN MS60N03

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Specifications

Gate Charge(Qg)28nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)198pF
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation34W
Reverse Transfer Capacitance (Crss@Vds)114pF
RDS(on)6.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)920pF
TypeN-Channel

Technical details

N-Channel 30V 60A 34W Surface Mount TO-252-2

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