MSKSEMI MS50N03

MSKSEMI · FETs & Power MOSFETs · MPN MS50N03

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Specifications

Output Capacitance(Coss)150pF
Pd - Power Dissipation30W
Configuration-
Gate Charge(Qg)7.5nC
Drain to Source Voltage30V
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Reverse Transfer Capacitance (Crss@Vds)110pF
RDS(on)7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.1nF

Technical details

N-Channel 30V 50A 30W Surface Mount TO-252

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