MSKSEMI MS3139KDFN

MSKSEMI · FETs & Power MOSFETs · MPN MS3139KDFN

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Specifications

Gate Charge(Qg)1nC@4.5V
Drain to Source Voltage20V
Current - Continuous Drain(Id)600mA
Operating Temperature --55℃~+125℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation450mW
Reverse Transfer Capacitance (Crss@Vds)15pF
RDS(on)650mΩ@4.5V
Number1 P-Channel

Technical details

P-Channel 20V 600mA 450mW Surface Mount DFN1006-3

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