MSKSEMI MS20N65F

MSKSEMI · FETs & Power MOSFETs · MPN MS20N65F

No reviews yet — be the first to review MSKSEMI MS20N65F.

Specifications

Gate Charge(Qg)73nC@10V
Drain to Source Voltage650V
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation32W
RDS(on)470mΩ@10V
Number1 N-channel
TypeN-Channel

Technical details

N-Channel 650V 20A 32W Through Hole TO-220F

Related FETs & Power MOSFETs