MSKSEMI MS18N50F

MSKSEMI · FETs & Power MOSFETs · MPN MS18N50F

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Specifications

Gate Charge(Qg)45nC@10V
Drain to Source Voltage500V
Current - Continuous Drain(Id)17A
Output Capacitance(Coss)800pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation45W
RDS(on)360mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)280pF
Number1 N-channel
Input Capacitance(Ciss)2.5nF
TypeN-Channel

Technical details

N-Channel 500V 17A 45W Through Hole TO-220F

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