MSKSEMI MS16N65S

MSKSEMI · FETs & Power MOSFETs · MPN MS16N65S

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Specifications

Gate Charge(Qg)54nC@10V
Drain to Source Voltage650V
Current - Continuous Drain(Id)16A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation180W
RDS(on)550mΩ@10V
Number1 N-channel
TypeN-Channel

Technical details

N-Channel 650V 16A 180W Surface Mount TO-263

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