MSKSEMI MS15N10

MSKSEMI · FETs & Power MOSFETs · MPN MS15N10

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Specifications

Gate Charge(Qg)9.3nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)480pF
Current - Continuous Drain(Id)15A
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation50W
Reverse Transfer Capacitance (Crss@Vds)35pF
RDS(on)75mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.48nF
TypeN-Channel

Technical details

N-Channel 100V 15A 50W Surface Mount TO-252-2

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