MSKSEMI MS13N50F

MSKSEMI · FETs & Power MOSFETs · MPN MS13N50F

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Specifications

Configuration-
Gate Charge(Qg)45nC@10V
Drain to Source Voltage500V
Output Capacitance(Coss)-
Current - Continuous Drain(Id)13A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation48W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)480mΩ@10V
Number-
Input Capacitance(Ciss)-

Technical details

P-Channel 500V 13A 48W Through Hole TO-220F

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