MSKSEMI MS10N65F

MSKSEMI · FETs & Power MOSFETs · MPN MS10N65F

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Specifications

Drain to Source Voltage650V
Output Capacitance(Coss)136pF
Current - Continuous Drain(Id)10A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation29W
RDS(on)950mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)19pF
Number1 N-channel
Input Capacitance(Ciss)1.56nF
TypeN-Channel

Technical details

N-Channel 650V 10A 29W Through Hole TO-220F

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