MSKSEMI MS100N03

MSKSEMI · FETs & Power MOSFETs · MPN MS100N03

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Specifications

Gate Charge(Qg)27nC@10V
Drain to Source Voltage20V
Output Capacitance(Coss)500pF
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))750mV
Pd - Power Dissipation60W
RDS(on)6mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)200pF
Number1 N-channel
Input Capacitance(Ciss)2nF
TypeN-Channel

Technical details

N-Channel 20V 60A 60W Surface Mount TO-252-2

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