MSKSEMI MMFTN3019E-MS

MSKSEMI · FETs & Power MOSFETs · MPN MMFTN3019E-MS

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage30V
Output Capacitance(Coss)16pF
Current - Continuous Drain(Id)200mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.1V
Pd - Power Dissipation200mW
Reverse Transfer Capacitance (Crss@Vds)10pF
RDS(on)3.5Ω@10V
Number1 N-channel
Input Capacitance(Ciss)23pF

Technical details

30V 200mA 200mW Surface Mount SOT-523

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