MSKSEMI MMBT3906DFN

MSKSEMI · Transistors (BJTs) · MPN MMBT3906DFN

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)300MHz
Collector - Emitter Voltage VCEO40V
DC Current Gain300
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation200mW
Number1 PNP
typePNP
Current - Collector(Ic)200mA
Vce Saturation(VCE(sat))300mV

Technical details

Bipolar (BJT) Transistor PNP 40V 200mA Surface Mount DFN1006-3

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