MSKSEMI LBSS84LT1G-MS

MSKSEMI · FETs & Power MOSFETs · MPN LBSS84LT1G-MS

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Specifications

Gate Charge(Qg)2.8nC@10V
Drain to Source Voltage55V
Output Capacitance(Coss)15.1pF
Current - Continuous Drain(Id)300mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation1W
Reverse Transfer Capacitance (Crss@Vds)7pF
RDS(on)4Ω@10V
Number1 P-Channel
Input Capacitance(Ciss)30.5pF

Technical details

55V 300mA 1.7V 1W 4Ω@10V 1 P-Channel SOT-23 Single FETs, MOSFETs RoHS

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