MSKSEMI · FETs & Power MOSFETs · MPN L2N7002DW1T1G-MS
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| Gate Charge(Qg) | 1.1nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 5.5pF |
| Current - Continuous Drain(Id) | 300mA |
| Operating Temperature - | -50℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Pd - Power Dissipation | 280mW |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF |
| RDS(on) | 1.8Ω@10V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 30.6pF |
60V 300mA 1.6V 280mW 1.8Ω@10V 2 N-Channel SOT-363 Single FETs, MOSFETs RoHS