MSKSEMI IRFR220N(MS)

MSKSEMI · FETs & Power MOSFETs · MPN IRFR220N(MS)

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Specifications

Gate Charge(Qg)16nC@10V
Drain to Source Voltage200V
Output Capacitance(Coss)90pF
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation55W
Reverse Transfer Capacitance (Crss@Vds)35pF
RDS(on)300mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)540pF

Technical details

200V 8A 55W Surface Mount TO-252

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