MSKSEMI FMMT593

MSKSEMI · Transistors (BJTs) · MPN FMMT593

No reviews yet — be the first to review MSKSEMI FMMT593.

Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)50MHz
Collector - Emitter Voltage VCEO100V
Emitter-Base Voltage VEBO5V
DC Current Gain300
Pd - Power Dissipation250mW
Number1 PNP
typePNP
Current - Collector(Ic)1A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))300mV

Technical details

Bipolar (BJT) Transistor PNP 100V 1A 50MHz 250mW Surface Mount SOT-23

Related Transistors (BJTs)