MSKSEMI FDV304P

MSKSEMI · FETs & Power MOSFETs · MPN FDV304P

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Specifications

Gate Charge(Qg)12.5nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)85pF
Current - Continuous Drain(Id)1.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))900mV
Pd - Power Dissipation1.11W
Reverse Transfer Capacitance (Crss@Vds)50pF
RDS(on)900mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)810pF
TypeP-Channel

Technical details

P-Channel 30V 1.5A 1.11W Surface Mount SOT-23

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