MSKSEMI FDV303N

MSKSEMI · FETs & Power MOSFETs · MPN FDV303N

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Specifications

Gate Charge(Qg)8.4nC@4.5V
Drain to Source Voltage30V
Output Capacitance(Coss)45pF
Current - Continuous Drain(Id)2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))800mV
Pd - Power Dissipation1W
Reverse Transfer Capacitance (Crss@Vds)36pF
RDS(on)200mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)695pF
TypeN-Channel

Technical details

N-Channel 30V 2A 1W Surface Mount SOT-23

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