MSKSEMI FDV302P

MSKSEMI · FETs & Power MOSFETs · MPN FDV302P

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Specifications

Gate Charge(Qg)2.8nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)15.1pF
Current - Continuous Drain(Id)200mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation1W
Reverse Transfer Capacitance (Crss@Vds)7pF
RDS(on)4Ω@10V
Number1 P-Channel
Input Capacitance(Ciss)30.5pF
TypeP-Channel

Technical details

P-Channel 30V 200mA 1W Surface Mount SOT-23

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