MSKSEMI FDS4435BZ(MS)

MSKSEMI · FETs & Power MOSFETs · MPN FDS4435BZ(MS)

No reviews yet — be the first to review MSKSEMI FDS4435BZ(MS).

Specifications

Gate Charge(Qg)11nC@4.5V
Drain to Source Voltage30V
Output Capacitance(Coss)160pF
Current - Continuous Drain(Id)9A
Operating Temperature --55℃~+125℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation2.1W
Reverse Transfer Capacitance (Crss@Vds)90pF
RDS(on)22mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1.25nF
Type-

Technical details

P-Channel 30V 9A 2.1W Surface Mount SOP-8

Related FETs & Power MOSFETs