MSKSEMI FDN338P

MSKSEMI · FETs & Power MOSFETs · MPN FDN338P

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Specifications

Gate Charge(Qg)3nC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)35pF
Current - Continuous Drain(Id)2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))800mV
Pd - Power Dissipation1.56W
Reverse Transfer Capacitance (Crss@Vds)25pF
RDS(on)85mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)180pF
TypeP-Channel

Technical details

P-Channel 20V 2A 1.56W Surface Mount SOT-23

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