MSKSEMI FDMS6681Z-MS

MSKSEMI · FETs & Power MOSFETs · MPN FDMS6681Z-MS

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Specifications

Output Capacitance(Coss)255pF
Pd - Power Dissipation120W
Configuration-
Gate Charge(Qg)60nC
Drain to Source Voltage30V
Current - Continuous Drain(Id)-
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
RDS(on)3mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)140pF
Number1 P-Channel
Input Capacitance(Ciss)3.45nF

Technical details

120W 30V 1.2V 3mΩ@10V 1 P-Channel P-Channel DFN-8L(5x6) Single FETs, MOSFETs RoHS

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