MSKSEMI · FETs & Power MOSFETs · MPN FDC6401N
No reviews yet — be the first to review MSKSEMI FDC6401N.
| Gate Charge(Qg) | 3.2nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | 50pF |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 800mV |
| Pd - Power Dissipation | 1.25W |
| Reverse Transfer Capacitance (Crss@Vds) | 45pF |
| RDS(on) | 22mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 280pF |
N-Channel 20V 4A 1.25W Surface Mount SOT-23-6