MSKSEMI FDC606P-MS

MSKSEMI · FETs & Power MOSFETs · MPN FDC606P-MS

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Specifications

Gate Charge(Qg)6.4nC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)80pF
Current - Continuous Drain(Id)4.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))650mV
Pd - Power Dissipation1.56W
Reverse Transfer Capacitance (Crss@Vds)75pF
RDS(on)40mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)540pF
TypeP-Channel

Technical details

P-Channel 20V 4.5A 1.56W Surface Mount SOT-23-6

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