MSKSEMI FDC5614P

MSKSEMI · FETs & Power MOSFETs · MPN FDC5614P

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Specifications

Gate Charge(Qg)10nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)42pF
Current - Continuous Drain(Id)3.3A
Operating Temperature --55℃~+125℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation2W
Reverse Transfer Capacitance (Crss@Vds)32pF
RDS(on)80mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)720pF

Technical details

P-Channel 60V 3.3A 2W Surface Mount SOT-23-6

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